Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IDB18E120ATMA1 |
| File Size | 1,075.43 KB |
| Total Pages | 8 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IDB18E120ATMA1 |
| Description | DIODE GEN PURP 1.2KV 31A TO263-3 |
IDB18E120ATMA1 - Infineon Technologies
The Products You May Be Interested In
 |
IDB18E120ATMA1 | Infineon Technologies | DIODE GEN PURP 1.2KV 31A TO263-3 | 491 More on Order |
URL Link
www.zouser.com/datasheet/IDB18E120ATMA1
|
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 31A (DC) Voltage - Forward (Vf) (Max) @ If 2.15V @ 18A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 195ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package PG-TO263-3 Operating Temperature - Junction -55°C ~ 150°C |