Semiconductors
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| Datasheet | IDC04S60CEX7SA1 |
| File Size | 57.48 KB |
| Total Pages | 5 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IDC04S60CEX7SA1, IDC04S60CEX1SA1 |
| Description | DIODE GEN PURPOSE SAWN WAFER, DIODE SIC 600V 4A SAWN WAFER |
IDC04S60CEX7SA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction - |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A (DC) Voltage - Forward (Vf) (Max) @ If 1.9V @ 4A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F 130pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -55°C ~ 175°C |