Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPA028N08N3GXKSA1 |
| File Size | 397.88 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPA028N08N3GXKSA1 |
| Description | MOSFET N-CH 80V 89A TO220-3 |
IPA028N08N3GXKSA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPA028N08N3GXKSA1 | Infineon Technologies | MOSFET N-CH 80V 89A TO220-3 | 1402 More on Order |
URL Link
www.zouser.com/datasheet/IPA028N08N3GXKSA1
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 89A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 89A, 10V Vgs(th) (Max) @ Id 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |