Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPB65R380C6ATMA1 |
| File Size | 1,249.36 KB |
| Total Pages | 19 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPB65R380C6ATMA1 |
| Description | MOSFET N-CH 650V 10.6A TO263 |
IPB65R380C6ATMA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPB65R380C6ATMA1 | Infineon Technologies | MOSFET N-CH 650V 10.6A TO263 | 423 More on Order |
URL Link
www.zouser.com/datasheet/IPB65R380C6ATMA1
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 100V FET Feature - Power Dissipation (Max) 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |