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IPB80N06S3L-06 Datasheet

IPB80N06S3L-06 Cover
DatasheetIPB80N06S3L-06
File Size185.8 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IPB80N06S3L-06, IPP80N06S3L-06, IPI80N06S3L06XK
Description MOSFET N-CH 55V 80A TO-263, MOSFET N-CH 55V 80A TO-220, MOSFET N-CH 55V 80A TO-262

IPB80N06S3L-06 - Infineon Technologies

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IPP80N06S3L-06 IPP80N06S3L-06 Infineon Technologies MOSFET N-CH 55V 80A TO-220 483

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IPI80N06S3L06XK IPI80N06S3L06XK Infineon Technologies MOSFET N-CH 55V 80A TO-262 539

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URL Link

IPB80N06S3L-06

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.6mOhm @ 56A, 10V

Vgs(th) (Max) @ Id

2.2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

196nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9417pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPP80N06S3L-06

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 56A, 10V

Vgs(th) (Max) @ Id

2.2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

196nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9417pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI80N06S3L06XK

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 56A, 10V

Vgs(th) (Max) @ Id

2.2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

196nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9417pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA