Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPBH6N03LA G |
| File Size | 279.84 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPBH6N03LA G, IPBH6N03LA |
| Description | MOSFET N-CH 25V 50A TO-263, MOSFET N-CH 25V 50A D2PAK |
IPBH6N03LA G - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 15V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 15V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |