Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IPD053N06N3GBTMA1 |
| File Size | 615.86 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPD053N06N3GBTMA1 |
| Description | MOSFET N-CH 60V 90A TO252-3 |
IPD053N06N3GBTMA1 - Infineon Technologies
The Products You May Be Interested In
 |
IPD053N06N3GBTMA1 | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 | 180 More on Order |
URL Link
www.zouser.com/datasheet/IPD053N06N3GBTMA1
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.3mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 58µA Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 30V FET Feature - Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |