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IPG15N06S3L-45 Datasheet

IPG15N06S3L-45 Cover
DatasheetIPG15N06S3L-45
File Size163.5 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPG15N06S3L-45
Description MOSFET 2N-CH 55V 15A TDSON-8

IPG15N06S3L-45 - Infineon Technologies

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URL Link

IPG15N06S3L-45

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

15A

Rds On (Max) @ Id, Vgs

45mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1420pF @ 25V

Power - Max

21W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-4