Datasheet | IPG20N06S3L-35 |
File Size | 162.39 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IPG20N06S3L-35 |
Description | MOSFET 2N-CH 55V 20A TDSON-8 |
IPG20N06S3L-35 - Infineon Technologies
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IPG20N06S3L-35 | Infineon Technologies | MOSFET 2N-CH 55V 20A TDSON-8 | 347 More on Order |
URL Link
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Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 35mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V Power - Max 30W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-4 |