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| Datasheet | IPI120P04P4L03AKSA1 |
| File Size | 248.78 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IPI120P04P4L03AKSA1 |
| Description | MOSFET P-CH TO262-3 |
IPI120P04P4L03AKSA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.2V @ 340µA Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V FET Feature - Power Dissipation (Max) 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3-1 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |