Semiconductors
Passive Components
Sensors
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Optoelectronics
| Datasheet | IPP45P03P4L11AKSA1 |
| File Size | 169.1 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPP45P03P4L11AKSA1, IPI45P03P4L11AKSA1 |
| Description | MOSFET P-CH 30V 45A TO220-3, MOSFET P-CH 30V 45A TO262-3 |
IPP45P03P4L11AKSA1 - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 45A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) +5V, -16V Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 45A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) +5V, -16V Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |