Semiconductors
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Optoelectronics
| Datasheet | IPU105N03L G |
| File Size | 547.04 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IPU105N03L G, IPS105N03LGAKMA1 |
| Description | MOSFET N-CH 30V 35A IPAK, MOSFET N-CH 30V 35A TO251-3 |
IPU105N03L G - Infineon Technologies
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V FET Feature - Power Dissipation (Max) 38W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V FET Feature - Power Dissipation (Max) 38W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak |