Datasheet | IPW60R330P6FKSA1 |
File Size | 3,084.71 KB |
Total Pages | 19 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IPW60R330P6FKSA1, IPP60R330P6XKSA1, IPA60R330P6XKSA1 |
Description | MOSFET N-CH 600V 12A TO247-3, MOSFET N-CH 600V 12A TO220-3, MOSFET N-CH 600V 12A TO220FP-3 |
IPW60R330P6FKSA1 - Infineon Technologies
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URL Link
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 100V FET Feature - Power Dissipation (Max) 93W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 100V FET Feature - Power Dissipation (Max) 93W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series CoolMOS™ P6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 370µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 100V FET Feature - Power Dissipation (Max) 32W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-FP Package / Case TO-220-3 Full Pack |