Top

IRF1324STRLPBF Datasheet

IRF1324STRLPBF Cover
DatasheetIRF1324STRLPBF
File Size521.2 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRF1324STRLPBF, IRF1324LPBF, IRF1324SPBF
Description MOSFET N-CH 24V 195A D2PAK, MOSFET N-CH 24V 195A TO262, MOSFET N-CH 24V 195A D2-PAK

IRF1324STRLPBF - Infineon Technologies

IRF1324STRLPBF Datasheet Page 1
IRF1324STRLPBF Datasheet Page 2
IRF1324STRLPBF Datasheet Page 3
IRF1324STRLPBF Datasheet Page 4
IRF1324STRLPBF Datasheet Page 5
IRF1324STRLPBF Datasheet Page 6
IRF1324STRLPBF Datasheet Page 7
IRF1324STRLPBF Datasheet Page 8
IRF1324STRLPBF Datasheet Page 9
IRF1324STRLPBF Datasheet Page 10

The Products You May Be Interested In

IRF1324STRLPBF IRF1324STRLPBF Infineon Technologies MOSFET N-CH 24V 195A D2PAK 303

More on Order

IRF1324LPBF IRF1324LPBF Infineon Technologies MOSFET N-CH 24V 195A TO262 326

More on Order

IRF1324SPBF IRF1324SPBF Infineon Technologies MOSFET N-CH 24V 195A D2-PAK 425

More on Order

URL Link

IRF1324STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.65mOhm @ 195A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7590pF @ 24V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF1324LPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.65mOhm @ 195A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7590pF @ 24V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRF1324SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.65mOhm @ 195A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7590pF @ 24V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB