![IRF7324D1TR Cover](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0001.jpg)
Datasheet | IRF7324D1TR |
File Size | 133.34 KB |
Total Pages | 8 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IRF7324D1TR, IRF7324D1 |
Description | MOSFET P-CH 20V 2.2A 8-SOIC, MOSFET P-CH 20V 2.2A 8-SOIC |
IRF7324D1TR - Infineon Technologies
![IRF7324D1TR Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0001.jpg)
![IRF7324D1TR Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0002.jpg)
![IRF7324D1TR Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0003.jpg)
![IRF7324D1TR Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0004.jpg)
![IRF7324D1TR Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0005.jpg)
![IRF7324D1TR Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0006.jpg)
![IRF7324D1TR Datasheet Page 7](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0007.jpg)
![IRF7324D1TR Datasheet Page 8](http://media.zouser.com/zouser/datasheet/sm/irf7324d1tr-0008.jpg)
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URL Link
Manufacturer Infineon Technologies Series FETKY™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series FETKY™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |