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| Datasheet | IRF7341QTRPBF |
| File Size | 213.01 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF7341QTRPBF |
| Description | MOSFET 2N-CH 55V 5.1A 8-SOIC |
IRF7341QTRPBF - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series HEXFET® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 5.1A Rds On (Max) @ Id, Vgs 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 780pF @ 25V Power - Max 2.4W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |