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IRF7476 Datasheet

IRF7476 Cover
DatasheetIRF7476
File Size111.38 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRF7476
Description MOSFET N-CH 12V 15A 8-SOIC

IRF7476 - Infineon Technologies

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IRF7476 IRF7476 Infineon Technologies MOSFET N-CH 12V 15A 8-SOIC 329

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URL Link

IRF7476

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

15A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V, 4.5V

Rds On (Max) @ Id, Vgs

8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)