Datasheet | IRF7809AV |
File Size | 200.04 KB |
Total Pages | 8 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IRF7809AV |
Description | MOSFET N-CH 30V 13.3A 8-SOIC |
IRF7809AV - Infineon Technologies
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IRF7809AV | Infineon Technologies | MOSFET N-CH 30V 13.3A 8-SOIC | 522 More on Order |
URL Link
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Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 3780pF @ 16V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |