Datasheet | IRFI9630G |
File Size | 1,554.52 KB |
Total Pages | 8 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IRFI9630G, IRFI9630GPBF |
Description | MOSFET P-CH 200V 4.3A TO220FP, MOSFET P-CH 200V 4.3A TO220FP |
IRFI9630G - Vishay Siliconix
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IRFI9630G | Vishay Siliconix | MOSFET P-CH 200V 4.3A TO220FP | 274 More on Order |
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IRFI9630GPBF | Vishay Siliconix | MOSFET P-CH 200V 4.3A TO220FP | 1728 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |