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| Datasheet | IRFL210PBF |
| File Size | 168.64 KB |
| Total Pages | 8 |
| Manufacturer | Vishay Siliconix |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IRFL210PBF, IRFL210TR, IRFL210, IRFL210TRPBF |
| Description | MOSFET N-CH 200V 0.96A SOT223, MOSFET N-CH 200V 0.96A SOT223, MOSFET N-CH 200V 0.96A SOT223, MOSFET N-CH 200V 0.96A SOT223 |
IRFL210PBF - Vishay Siliconix
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 580mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V FET Feature - Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |