Datasheet | IRFP22N50A |
File Size | 314.25 KB |
Total Pages | 9 |
Manufacturer | Vishay Siliconix |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IRFP22N50A, IRFP22N50APBF |
Description | MOSFET N-CH 500V 22A TO-247AC, MOSFET N-CH 500V 22A TO-247AC |
IRFP22N50A - Vishay Siliconix
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IRFP22N50A | Vishay Siliconix | MOSFET N-CH 500V 22A TO-247AC | 456 More on Order |
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IRFP22N50APBF | Vishay Siliconix | MOSFET N-CH 500V 22A TO-247AC | 5427 More on Order |
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Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V FET Feature - Power Dissipation (Max) 277W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 25V FET Feature - Power Dissipation (Max) 277W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |