
Datasheet | IRFR5505TRR |
File Size | 113.21 KB |
Total Pages | 11 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | IRFR5505TRR, IRFR5505TRL, IRFU5505, IRFR5505 |
Description | MOSFET P-CH 55V 18A DPAK, MOSFET P-CH 55V 18A DPAK, MOSFET P-CH 55V 18A I-PAK, MOSFET P-CH 55V 18A DPAK |
IRFR5505TRR - Infineon Technologies











The Products You May Be Interested In
![]() |
IRFR5505TRR | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | 390 More on Order |
![]() |
IRFR5505TRL | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | 189 More on Order |
![]() |
IRFU5505 | Infineon Technologies | MOSFET P-CH 55V 18A I-PAK | 476 More on Order |
![]() |
IRFR5505 | Infineon Technologies | MOSFET P-CH 55V 18A DPAK | 531 More on Order |
URL Link
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V FET Feature - Power Dissipation (Max) 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |