Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRFS4228TRLPBF |
| File Size | 371.19 KB |
| Total Pages | 10 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IRFS4228TRLPBF, IRFSL4228PBF, IRFS4228PBF |
| Description | MOSFET N-CH 150V 83A D2PAK, MOSFET N-CH 150V 83A TO-262, MOSFET N-CH 150V 83A D2PAK |
IRFS4228TRLPBF - Infineon Technologies
The Products You May Be Interested In
 |
IRFS4228TRLPBF | Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | 546 More on Order |
 |
IRFSL4228PBF | Infineon Technologies | MOSFET N-CH 150V 83A TO-262 | 125 More on Order |
|
IRFS4228PBF | Infineon Technologies | MOSFET N-CH 150V 83A D2PAK | 563 More on Order |
URL Link
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 83A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 83A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 83A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 33A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |