Top

IRFZ34NL Datasheet

IRFZ34NL Cover
DatasheetIRFZ34NL
File Size166.96 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRFZ34NL, IRFZ34NSTRR, IRFZ34NS
Description MOSFET N-CH 55V 29A TO-262, MOSFET N-CH 55V 29A D2PAK, MOSFET N-CH 55V 29A D2PAK

IRFZ34NL - Infineon Technologies

IRFZ34NL Datasheet Page 1
IRFZ34NL Datasheet Page 2
IRFZ34NL Datasheet Page 3
IRFZ34NL Datasheet Page 4
IRFZ34NL Datasheet Page 5
IRFZ34NL Datasheet Page 6
IRFZ34NL Datasheet Page 7
IRFZ34NL Datasheet Page 8
IRFZ34NL Datasheet Page 9
IRFZ34NL Datasheet Page 10
IRFZ34NL Datasheet Page 11

The Products You May Be Interested In

IRFZ34NL IRFZ34NL Infineon Technologies MOSFET N-CH 55V 29A TO-262 233

More on Order

IRFZ34NSTRR IRFZ34NSTRR Infineon Technologies MOSFET N-CH 55V 29A D2PAK 401

More on Order

IRFZ34NS IRFZ34NS Infineon Technologies MOSFET N-CH 55V 29A D2PAK 325

More on Order

URL Link

IRFZ34NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFZ34NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFZ34NS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB