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IRG8CH137K10F Datasheet

IRG8CH137K10F Cover
DatasheetIRG8CH137K10F
File Size191.65 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRG8CH137K10F
Description IGBT CHIP WAFER

IRG8CH137K10F - Infineon Technologies

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URL Link

IRG8CH137K10F

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 150A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

820nC

Td (on/off) @ 25°C

115ns/570ns

Test Condition

600V, 150A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die