Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IRL40S212 |
| File Size | 618.36 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IRL40S212, IRL40B212 |
| Description | MOSFET N-CH 40V 195A, MOSFET N-CH 40V 195A |
IRL40S212 - Infineon Technologies
The Products You May Be Interested In
URL Link
|
Manufacturer Infineon Technologies Series StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 137nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8320pF @ 25V FET Feature - Power Dissipation (Max) 231W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 137nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8320pF @ 25V FET Feature - Power Dissipation (Max) 231W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |