Top

IRL5602STRLPBF Datasheet

IRL5602STRLPBF Cover
DatasheetIRL5602STRLPBF
File Size238.6 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 3 part numbers
Associated Parts IRL5602STRLPBF, IRL5602STRRPBF, IRL5602SPBF
Description MOSFET P-CH 20V 24A D2PAK, MOSFET P-CH 20V 24A D2PAK, MOSFET P-CH 20V 24A D2PAK

IRL5602STRLPBF - Infineon Technologies

IRL5602STRLPBF Datasheet Page 1
IRL5602STRLPBF Datasheet Page 2
IRL5602STRLPBF Datasheet Page 3
IRL5602STRLPBF Datasheet Page 4
IRL5602STRLPBF Datasheet Page 5
IRL5602STRLPBF Datasheet Page 6
IRL5602STRLPBF Datasheet Page 7
IRL5602STRLPBF Datasheet Page 8
IRL5602STRLPBF Datasheet Page 9
IRL5602STRLPBF Datasheet Page 10

The Products You May Be Interested In

IRL5602STRLPBF IRL5602STRLPBF Infineon Technologies MOSFET P-CH 20V 24A D2PAK 521

More on Order

IRL5602STRRPBF IRL5602STRRPBF Infineon Technologies MOSFET P-CH 20V 24A D2PAK 277

More on Order

IRL5602SPBF IRL5602SPBF Infineon Technologies MOSFET P-CH 20V 24A D2PAK 197

More on Order

URL Link

IRL5602STRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL5602STRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL5602SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

42mOhm @ 12A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1460pF @ 15V

FET Feature

-

Power Dissipation (Max)

75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB