Datasheet | IRLL2705TR |
File Size | 160.24 KB |
Total Pages | 9 |
Manufacturer | Infineon Technologies |
Website | https://www.infineon.com |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | IRLL2705TR |
Description | MOSFET N-CH 55V 3.8A SOT223 |
IRLL2705TR - Infineon Technologies
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IRLL2705TR | Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | 364 More on Order |
URL Link
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Infineon Technologies Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 40mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |