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IRLML2502TR Datasheet

IRLML2502TR Cover
DatasheetIRLML2502TR
File Size126.69 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRLML2502TR
Description MOSFET N-CH 20V 4.2A SOT-23

IRLML2502TR - Infineon Technologies

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IRLML2502TR IRLML2502TR Infineon Technologies MOSFET N-CH 20V 4.2A SOT-23 459

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URL Link

IRLML2502TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3