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| Datasheet | IS42S16800E-7TL-TR |
| File Size | 899.62 KB |
| Total Pages | 61 |
| Manufacturer | ISSI, Integrated Silicon Solution Inc |
| Website | |
| Total Parts | This datasheet covers 32 part numbers |
| Associated Parts | IS42S16800E-7TL-TR, IS42S81600E-7TLI-TR, IS42S81600E-7TLI, IS42S81600E-7TL-TR, IS42S81600E-6TLI-TR, IS42S81600E-6TLI, IS42S81600E-6TL-TR, IS42S81600E-6TL, IS42S16800E-7TLI-TR, IS42S16800E-7TLI, IS42S16800E-75ETLI-TR, IS42S16800E-75ETLI, IS42S16800E-75ETL-TR, IS42S16800E-75ETL, IS42S16800E-75EBLI-TR, IS42S16800E-75EBLI, IS42S16800E-75EBL-TR, IS42S16800E-75EBL, IS42S16800E-7BLI-TR, IS42S16800E-7BLI, IS42S16800E-7BL-TR, IS42S16800E-7BL, IS42S16800E-6TLI-TR, IS42S16800E-6TLI, IS42S16800E-6TL-TR, IS42S16800E-6TL, IS42S16800E-6BLI-TR, IS42S16800E-6BLI, IS42S16800E-6BL-TR, IS42S16800E-6BL, IS42S81600E-7TL, IS42S16800E-7TL |
| Description | IC DRAM 128M PARALLEL 54TSOP, IC DRAM 128M PARALLEL 54TSOP, IC DRAM 128M PARALLEL 54TSOP, IC DRAM 128M PARALLEL 54TSOP, IC DRAM 128M PARALLEL 54TSOP |
IS42S16800E-7TL-TR - ISSI, Integrated Silicon Solution Inc
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (16M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 143MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |
Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 128Mb (8M x 16) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page - Access Time 5.4ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 54-TSOP (0.400", 10.16mm Width) Supplier Device Package 54-TSOP II |