Datasheet | IXFK150N30P3 |
File Size | 126.17 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXFK150N30P3, IXFX150N30P3 |
Description | MOSFET N-CH 300V 150A TO-264, MOSFET N-CH 300V 150A TO-247 |
IXFK150N30P3 - IXYS
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IXFK150N30P3 | IXYS | MOSFET N-CH 300V 150A TO-264 | 433 More on Order |
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IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 75A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12100pF @ 25V FET Feature - Power Dissipation (Max) 1300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 19mOhm @ 75A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12100pF @ 25V FET Feature - Power Dissipation (Max) 1300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |