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| Datasheet | IXFK360N10T |
| File Size | 182.9 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFK360N10T, IXFX360N10T |
| Description | MOSFET N-CH 100V 360A TO-264, MOSFET N-CH 100V 360A PLUS247 |
IXFK360N10T - IXYS
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Manufacturer IXYS Series GigaMOS™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 525nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 33000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer IXYS Series GigaMOS™ HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 360A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 525nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 33000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |