Datasheet | IXFK36N60P |
File Size | 268.72 KB |
Total Pages | 4 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFK36N60P, IXFT36N60P, IXFH36N60P |
Description | MOSFET N-CH 600V 36A TO-264, MOSFET N-CH 600V 36A TO-268 D3, MOSFET N-CH 600V 36A TO-247 |
IXFK36N60P - IXYS
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IXFK36N60P | IXYS | MOSFET N-CH 600V 36A TO-264 | 126 More on Order |
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IXFT36N60P | IXYS | MOSFET N-CH 600V 36A TO-268 D3 | 230 More on Order |
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IXFH36N60P | IXYS | MOSFET N-CH 600V 36A TO-247 | 451 More on Order |
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IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V FET Feature - Power Dissipation (Max) 650W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V FET Feature - Power Dissipation (Max) 650W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXYS Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V FET Feature - Power Dissipation (Max) 650W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |