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| Datasheet | IXFN32N60 |
| File Size | 192.11 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | IXFN32N60, IXFK36N60, IXFK32N60, IXFN36N60 |
| Description | MOSFET N-CH 600V 32A SOT-227, MOSFET N-CH 600V 36A TO-264AA, MOSFET N-CH 600V 32A TO-264AA, MOSFET N-CH 600V 36A SOT-227B |
IXFN32N60 - IXYS
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 325nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V FET Feature - Power Dissipation (Max) 520AW (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 325nC @ 25V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 325nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 325nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |