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| Datasheet | IXFN50N120SIC |
| File Size | 467.06 KB |
| Total Pages | 7 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN50N120SIC |
| Description | MOSFET N-CH |
IXFN50N120SIC - IXYS
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URL Link
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Manufacturer IXYS Series - FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id 2.2V @ 2mA Gate Charge (Qg) (Max) @ Vgs 100nC @ 20V Vgs (Max) +20V, -5V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 1000V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |