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IXFN55N50F Datasheet

IXFN55N50F Cover
DatasheetIXFN55N50F
File Size106.38 KB
Total Pages2
ManufacturerIXYS-RF
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN55N50F
Description MOSFET N-CH 500V 55A SOT227B

IXFN55N50F - IXYS-RF

IXFN55N50F Datasheet Page 1
IXFN55N50F Datasheet Page 2

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URL Link

IXFN55N50F

IXYS-RF

Manufacturer

IXYS-RF

Series

HiPerRF™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

85mOhm @ 27.5A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6700pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC