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| Datasheet | IXFR21N100Q |
| File Size | 109.67 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFR21N100Q |
| Description | MOSFET N-CH 1KV 18A ISOPLUS247 |
IXFR21N100Q - IXYS
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IXFR21N100Q | IXYS | MOSFET N-CH 1KV 18A ISOPLUS247 | 218 More on Order |
URL Link
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5900pF @ 25V FET Feature - Power Dissipation (Max) 350W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |