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IXFR26N100P Datasheet

IXFR26N100P Cover
DatasheetIXFR26N100P
File Size107.31 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFR26N100P
Description MOSFET N-CH 1000V 15A ISOPLUS247

IXFR26N100P - IXYS

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IXFR26N100P IXFR26N100P IXYS MOSFET N-CH 1000V 15A ISOPLUS247 342

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Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

197nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

11900pF @ 25V

FET Feature

-

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™