Datasheet | IXFT50N60P3 |
File Size | 146.64 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFT50N60P3, IXFH50N60P3, IXFQ50N60P3 |
Description | MOSFET N-CH 600V 50A TO268, MOSFET N-CH 600V 50A TO247, MOSFET N-CH 600V 50A TO3P |
IXFT50N60P3 - IXYS
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IXFT50N60P3 | IXYS | MOSFET N-CH 600V 50A TO268 | 495 More on Order |
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IXFH50N60P3 | IXYS | MOSFET N-CH 600V 50A TO247 | 289 More on Order |
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IXFQ50N60P3 | IXYS | MOSFET N-CH 600V 50A TO3P | 623 More on Order |
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IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AD (IXFH) Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series HiPerFET™, Polar3™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 145mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |