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Datasheet | IXFT50N60X |
File Size | 184.49 KB |
Total Pages | 6 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXFT50N60X, IXFH50N60X, IXFQ50N60X |
Description | MOSFET N-CH 600V 50A TO268, MOSFET N-CH 600V 50A TO247, MOSFET N-CH 600V 50A TO3P |
IXFT50N60X - IXYS
![IXFT50N60X Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0001.jpg)
![IXFT50N60X Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0002.jpg)
![IXFT50N60X Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0003.jpg)
![IXFT50N60X Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0004.jpg)
![IXFT50N60X Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0005.jpg)
![IXFT50N60X Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/ixft50n60x-0006.jpg)
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IXFQ50N60X | IXYS | MOSFET N-CH 600V 50A TO3P | 539 More on Order |
URL Link
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 25V FET Feature - Power Dissipation (Max) 660W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 25V FET Feature - Power Dissipation (Max) 660W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 25V FET Feature - Power Dissipation (Max) 660W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |