Datasheet | IXFX180N085 |
File Size | 48.19 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | IXFX180N085, IXFK180N085 |
Description | MOSFET N-CH 85V 180A PLUS247, MOSFET N-CH 85V 180A TO-264AA |
IXFX180N085 - IXYS
The Products You May Be Interested In
IXFX180N085 | IXYS | MOSFET N-CH 85V 180A PLUS247 | 566 More on Order |
|
IXFK180N085 | IXYS | MOSFET N-CH 85V 180A TO-264AA | 276 More on Order |
URL Link
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 85V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |