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IXFX32N50 Datasheet

IXFX32N50 Cover
DatasheetIXFX32N50
File Size33.54 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFX32N50
Description MOSFET N-CH 500V 32A PLUS247

IXFX32N50 - IXYS

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URL Link

IXFX32N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5450pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3