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| Datasheet | IXTA1N200P3HV |
| File Size | 262.47 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IXTA1N200P3HV, IXTH1N200P3HV, IXTH1N200P3 |
| Description | MOSFET N-CH 2000V 1A TO-263HV, MOSFET N-CH 2000V 1A TO-247HV, MOSFET N-CH 2000V 1A TO-247 |
IXTA1N200P3HV - IXYS
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IXTA1N200P3HV | IXYS | MOSFET N-CH 2000V 1A TO-263HV | 454 More on Order |
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IXTH1N200P3HV | IXYS | MOSFET N-CH 2000V 1A TO-247HV | 670 More on Order |
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IXTH1N200P3 | IXYS | MOSFET N-CH 2000V 1A TO-247 | 505 More on Order |
URL Link
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247HV Package / Case TO-247-3 Variant |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 2000V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |