Datasheet | IXTA20N65X |
File Size | 231.05 KB |
Total Pages | 6 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTA20N65X, IXTP20N65X, IXTH20N65X |
Description | MOSFET N-CH 650V 20A TO-263, MOSFET N-CH 650V 20A TO-220, MOSFET N-CH 650V 20A TO-247 |
IXTA20N65X - IXYS
The Products You May Be Interested In
IXTA20N65X | IXYS | MOSFET N-CH 650V 20A TO-263 | 455 More on Order |
|
IXTP20N65X | IXYS | MOSFET N-CH 650V 20A TO-220 | 186 More on Order |
|
IXTH20N65X | IXYS | MOSFET N-CH 650V 20A TO-247 | 587 More on Order |
URL Link
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V FET Feature - Power Dissipation (Max) 320W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V FET Feature - Power Dissipation (Max) 320W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V FET Feature - Power Dissipation (Max) 320W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |