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IXTB62N50L Datasheet

IXTB62N50L Cover
DatasheetIXTB62N50L
File Size149.4 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTB62N50L
Description MOSFET N-CH 500V 62A PLUS264

IXTB62N50L - IXYS

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IXTB62N50L IXTB62N50L IXYS MOSFET N-CH 500V 62A PLUS264 665

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URL Link

IXTB62N50L

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

100mOhm @ 31A, 20V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

550nC @ 20V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

11500pF @ 25V

FET Feature

-

Power Dissipation (Max)

800W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA