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IXTF1R4N450 Datasheet

IXTF1R4N450 Cover
DatasheetIXTF1R4N450
File Size186.47 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTF1R4N450
Description 2500V TO 4500V VERY HI VOLT PWR

IXTF1R4N450 - IXYS

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IXTF1R4N450 IXTF1R4N450 IXYS 2500V TO 4500V VERY HI VOLT PWR 434

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

4500V

Current - Continuous Drain (Id) @ 25°C

1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3300pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5 (3 Leads)