Datasheet | IXTH60N20L2 |
File Size | 149.47 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTH60N20L2, IXTT60N20L2, IXTQ60N20L2 |
Description | MOSFET N-CH 200V 60A TO-247, MOSFET N-CH 200V 60A TO268, MOSFET N-CH 200V 60A TO-3P |
IXTH60N20L2 - IXYS
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IXTH60N20L2 | IXYS | MOSFET N-CH 200V 60A TO-247 | 634 More on Order |
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IXTT60N20L2 | IXYS | MOSFET N-CH 200V 60A TO268 | 613 More on Order |
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IXTQ60N20L2 | IXYS | MOSFET N-CH 200V 60A TO-3P | 582 More on Order |
URL Link
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXYS Manufacturer IXYS Series Linear L2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 25V FET Feature - Power Dissipation (Max) 540W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |