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IXTJ36N20 Datasheet

IXTJ36N20 Cover
DatasheetIXTJ36N20
File Size69.33 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTJ36N20
Description MOSFET N-CH 200V 36A TO-247AD

IXTJ36N20 - IXYS

IXTJ36N20 Datasheet Page 1
IXTJ36N20 Datasheet Page 2

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IXTJ36N20 IXTJ36N20 IXYS MOSFET N-CH 200V 36A TO-247AD 224

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URL Link

IXTJ36N20

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2970pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-3P-3 Full Pack