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| Datasheet | IXTK22N100L |
| File Size | 172.88 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXTK22N100L, IXTX22N100L |
| Description | MOSFET N-CH 1000V 22A TO-264, MOSFET N-CH 1000V 22A PLUS247 |
IXTK22N100L - IXYS
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Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 600mOhm @ 11A, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7050pF @ 25V FET Feature - Power Dissipation (Max) 700W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 (IXTK) Package / Case TO-264-3, TO-264AA |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 11A, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 15V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7050pF @ 25V FET Feature - Power Dissipation (Max) 700W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS247™-3 Package / Case TO-247-3 |