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| Datasheet | IXTN550N055T2 |
| File Size | 178.44 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXTN550N055T2 |
| Description | MOSFET N-CH 55V 550A SOT-227 |
IXTN550N055T2 - IXYS
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IXTN550N055T2 | IXYS | MOSFET N-CH 55V 550A SOT-227 | 187 More on Order |
URL Link
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Manufacturer IXYS Series GigaMOS™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 550A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 595nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V FET Feature - Power Dissipation (Max) 940W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |